| PART |
Description |
Maker |
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| AT49F002N-90JC AT49F002NT-70JL AT49F002NT-90JL AT4 |
256K X 8 FLASH 5V PROM, 70 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
256K X 8 FLASH 5V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
256K X 8 FLASH 5V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
256K X 8 FLASH 5V PROM, 55 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
550NS,PDIP,IND TEMP,5.0V(FLASH) 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
聚兴科技股份有限公司
Atmel, Corp.
ATMEL CORP
|
| S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PDSO56
2M X 16 FLASH 3V PROM, 90 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| SST27SF512-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
64K X 8 FLASH 12V PROM, 70 ns, PQCC32
128K X 8 FLASH 12V PROM, 70 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
SILICON STORAGE TECHNOLOGY INC
|
| S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc.
SPANSION LLC
|
| S29NS016J0PBJW003 S29NS064J0LBJW000 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 1M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
|
Spansion, Inc.
SPANSION LLC
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| M25P32-VMW6G M25P32-VMP6G M25P32-VMW6P |
4M X 8 FLASH 2.7V PROM, PDSO8 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
4M X 8 FLASH 2.7V PROM, DSO8
|
Numonyx Asia Pacific Pte, Ltd.
|
| AM29SL160CB-90WCC AM29SL160CB-100WCI AM29SL160CB-1 |
1M X 16 FLASH 1.8V PROM, 90 ns, PBGA48
1M X 16 FLASH 1.8V PROM, 100 ns, PBGA48
1M X 16 FLASH 1.8V PROM, 150 ns, PDSO48
|
ADVANCED MICRO DEVICES INC
|
|
